{"version":"1.0","provider_name":"PV Tech","provider_url":"https:\/\/www.pv-tech.org","title":"In&#45;line plasma&#45;chemical etching of crystalline silicon wafers at atmospheric pressure using FT&#45;IR spectroscopic process control","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"NPHeBVFvxO\"><a href=\"https:\/\/www.pv-tech.org\/technical-papers\/inline-plasmachemical-etching-of-crystalline-silicon-wafers-at-atmospheric-pressure-using-ftir-spectroscopic-process-control\/\">In&#45;line plasma&#45;chemical etching of  crystalline silicon wafers at atmospheric  pressure using FT&#45;IR spectroscopic  process control<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.pv-tech.org\/technical-papers\/inline-plasmachemical-etching-of-crystalline-silicon-wafers-at-atmospheric-pressure-using-ftir-spectroscopic-process-control\/embed\/#?secret=NPHeBVFvxO\" width=\"600\" height=\"338\" title=\"&#8220;In&#045;line plasma&#045;chemical etching of  crystalline silicon wafers at atmospheric  pressure using FT&#045;IR spectroscopic  process control&#8221; &#8212; PV Tech\" data-secret=\"NPHeBVFvxO\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script>\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n<\/script>\n","thumbnail_url":"https:\/\/www.pv-tech.org\/wp-content\/uploads\/2020\/12\/cellp-fraunhofer.jpg","thumbnail_width":200,"thumbnail_height":171,"description":"The etching technology currently used in the solar industry is mostly based on wet chemical processing. Plasmaenhanced dry chemical etching at atmospheric pressure is an alternative to the existing technology, especially when combined with similar process technologies, for example plasma&#45;enhanced deposition techniques at atmospheric pressure, to provide a continuous in&#45;line processing of crystalline silicon solar cells. This paper presents the use of plasma chemical etching using Fourier Transform infrared (FT&#45;IR) spectroscopy to monitor different silicon wafer processing steps as an alternative to the widely used wet chemical processing approach."}